Ut Al2 O3 (R-Al2 O3 ) substrates at 600 C utilizing a RFMS deposition process

July 20, 2022

Ut Al2 O3 (R-Al2 O3 ) substrates at 600 C utilizing a RFMS deposition process with Ti target (99.5 ) and substantial purity N2 gas. RBS of one.four.eight MeV He ions displays that the composition is stoichiometric (N/Ti = one.0 0.05) and the film thickness made use of in this study is 170 nm (deposition time of 1 hr). Here, the density of five.25×1022 Ti cm-3 (five.4 gcm-3 ) is employed. Diffraction peaks have been observed at 36.6 , 42.six and 77 on SiO2 glass and C-Al2 O3 . Crystalline construction has become identified being a cubic structure and these correspond to (111), (200) and (222) diffractions [79]. Diffraction intensity of (111) is bigger than that of (200) on SiO2 glass, and diffraction of (111) on C-Al2 O3 is quite intensive. TiN on R-Al2 O3 has preferential growth orientation of (220) of the cubic framework (diffraction angle at 61 ). Sputtered atoms are collected during the carbon foil (a hundred nm) as well as sputtered atoms are analyzed by RBS to get the sputtering yields [54] (carbon collector strategy). three. Outcomes and Discussion three.1. SiO2 The XRD intensity with the diffraction angle of 22 (quite possibly the most intensive (002) diffraction of hexagonal-trydimite) normalized to that of as-grown SiO2 movies on Si(001) is proven in Figure 1 being a function of the ion fluence for 90 MeV Ni10 , a hundred MeV Xe14 and 200 MeV Xe14 ion affect. The XRD intensity from the irradiated sample normalized to that of your unirradiated sample is GS-626510 custom synthesis proportional to your ion fluence to a certain fluence. Deviation in the linear dependence for that substantial fluence may very well be because of the overlapping result. As observed in latent track formation (e.g., [5,6]), electronic excitation effects lengthen to a area (around cylindrical) which has a radius of many nm and also a length from the projected array or movie thickness, and consequently ions may hit the ion-irradiated part to get a substantial ion fluence (referred to as the overlapping impact). As described beneath, the XRD degradation yield per unit ion fluence (YXD ) is lowered at a large fluence, and this could be understood as Combretastatin A-1 Protocol thermal annealing and/or a reduction inside the disordered regions through ion-induced defects (recrystallization [26]). The injury cross-sections (AD obtained by RBS-channeling (RBS-C) procedure and TEM [5]) are compared with YXD in Figure two, and it seems that each agree properly for Se ten keV. A discrepancy among AD and YXD is seen for Se 10 keV, and also the reason for this is not understood. On top of that, sputtering yields are sometimes diminished, and that is unlikely to get explained through the annealing effect. Consequently, the factors for the sputtering suppression at a large fluence continue to be in query. The XRD degradation yields (YXD ) per unit ion fluence are obtained and offered in Table 1. The film thickness continues to be obtained to be 1.5 , employing one.8 MeV He RBS. The attenuation length (LXA ) of Cu-k (8.0 keV) is obtained for being 128 [80] and also the attenuation depth (LXA in(22 /2)) = 24.three . The movie thickness ( 1.five ) is a lot smaller sized compared to the attenuation depth and hence no correction is necessary for the XRD intensity. The lattice expansion or boost inside the lattice parameter of 0.five with an estimated error of 0.2 at one 1012 cm- two is identified for being nearly independent in the electronic stopping electrical power.Quantum Beam Sci. 2021, five,five ofFigure 1. XRD intensity from (002) diffraction plane at 22 normalized to as-grown films of SiO2 like a perform of ion fluence for 90 MeV Ni (, 100 MeV Xe (o, ) and 200 MeV Xe (x) ions. Information of 90 MeV Ni ( and a hundred MeV Xe are from [70]. Linear match is indicated by dashed lines. An.